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/* $Id: mtd.h,v 1.35 2002/08/29 21:41:42 gleixner Exp $ */
/*
* ChangeLog:
* 19-Sep-2002 Lineo Japan, Inc. add erase-by-force mode
*
*/
/*
* ChangeLog:
* 19-Sep-2002 Lineo Japan, Inc. add erase-by-force mode
* 23-Oct-2002 SHARP add definitions for CONFIG_MTD_NAND_LOGICAL_ADDRESS_ACCESS
*
*/
#ifndef __MTD_MTD_H__
#define __MTD_MTD_H__
#ifdef __KERNEL__
#include <linux/config.h>
#include <linux/version.h>
#include <linux/types.h>
#include <linux/mtd/compatmac.h>
#include <linux/module.h>
#include <linux/uio.h>
#endif /* __KERNEL__ */
struct erase_info_user {
u_int32_t start;
u_int32_t length;
};
struct mtd_oob_buf {
u_int32_t start;
u_int32_t length;
unsigned char *ptr;
};
#define MTD_CHAR_MAJOR 90
#define MTD_BLOCK_MAJOR 31
#define MAX_MTD_DEVICES 16
#define MTD_ABSENT 0
#define MTD_RAM 1
#define MTD_ROM 2
#define MTD_NORFLASH 3
#define MTD_NANDFLASH 4
#define MTD_PEROM 5
#define MTD_OTHER 14
#define MTD_UNKNOWN 15
#define MTD_CLEAR_BITS 1 // Bits can be cleared (flash)
#define MTD_SET_BITS 2 // Bits can be set
#define MTD_ERASEABLE 4 // Has an erase function
#define MTD_WRITEB_WRITEABLE 8 // Direct IO is possible
#define MTD_VOLATILE 16 // Set for RAMs
#define MTD_XIP 32 // eXecute-In-Place possible
#define MTD_OOB 64 // Out-of-band data (NAND flash)
#define MTD_ECC 128 // Device capable of automatic ECC
// Some common devices / combinations of capabilities
#define MTD_CAP_ROM 0
#define MTD_CAP_RAM (MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE)
#define MTD_CAP_NORFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE)
#define MTD_CAP_NANDFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB)
#define MTD_WRITEABLE (MTD_CLEAR_BITS|MTD_SET_BITS)
// Types of automatic ECC/Checksum available
#define MTD_ECC_NONE 0 // No automatic ECC available
#define MTD_ECC_RS_DiskOnChip 1 // Automatic ECC on DiskOnChip
#define MTD_ECC_SW 2 // SW ECC for Toshiba & Samsung devices
struct mtd_info_user {
u_char type;
u_int32_t flags;
u_int32_t size; // Total size of the MTD
u_int32_t erasesize;
u_int32_t oobblock; // Size of OOB blocks (e.g. 512)
u_int32_t oobsize; // Amount of OOB data per block (e.g. 16)
u_int32_t ecctype;
u_int32_t eccsize;
};
struct region_info_user {
u_int32_t offset; /* At which this region starts,
* from the beginning of the MTD */
u_int32_t erasesize; /* For this region */
u_int32_t numblocks; /* Number of blocks in this region */
u_int32_t regionindex;
};
#ifdef CONFIG_MTD_NAND_LOGICAL_ADDRESS_ACCESS
struct read_laddr_info_user {
loff_t from;
size_t len;
u_char* buf;
};
struct write_laddr_info_user {
loff_t to;
size_t len;
u_char* buf;
};
#endif
#define MEMGETINFO _IOR('M', 1, struct mtd_info_user)
#define MEMERASE _IOW('M', 2, struct erase_info_user)
#define MEMWRITEOOB _IOWR('M', 3, struct mtd_oob_buf)
#define MEMREADOOB _IOWR('M', 4, struct mtd_oob_buf)
#define MEMLOCK _IOW('M', 5, struct erase_info_user)
#define MEMUNLOCK _IOW('M', 6, struct erase_info_user)
#define MEMGETREGIONCOUNT _IOR('M', 7, int)
#define MEMGETREGIONINFO _IOWR('M', 8, struct region_info_user)
#ifdef CONFIG_MTD_NAND_ERASE_BY_FORCE
#define MEMERASEBYFORCE _IOW('M', 9, struct erase_info_user)
#else
#define MEMIOCTLRSV9 _IO('M', 9)
#endif
#ifdef CONFIG_MTD_NAND_LOGICAL_ADDRESS_ACCESS
#define MEMCLEANUPLADDR _IO('M', 10)
#define MEMREADLADDR _IOR('M', 11, struct read_laddr_info_user)
#define MEMWRITELADDR _IOW('M', 12, struct write_laddr_info_user)
#else
#define MEMIOCTLRSV10 _IO('M', 10)
#define MEMIOCTLRSV11 _IO('M', 11)
#define MEMIOCTLRSV12 _IO('M', 12)
#endif
#ifndef __KERNEL__
typedef struct mtd_info_user mtd_info_t;
typedef struct erase_info_user erase_info_t;
typedef struct region_info_user region_info_t;
/* User-space ioctl definitions */
#else /* __KERNEL__ */
#define MTD_ERASE_PENDING 0x01
#define MTD_ERASING 0x02
#define MTD_ERASE_SUSPEND 0x04
#define MTD_ERASE_DONE 0x08
#define MTD_ERASE_FAILED 0x10
struct erase_info {
struct mtd_info *mtd;
u_int32_t addr;
u_int32_t len;
u_long time;
u_long retries;
u_int dev;
u_int cell;
void (*callback) (struct erase_info *self);
u_long priv;
u_char state;
struct erase_info *next;
#ifdef CONFIG_MTD_NAND_ERASE_BY_FORCE
int by_force;
#endif
};
struct mtd_erase_region_info {
u_int32_t offset; /* At which this region starts, from the beginning of the MTD */
u_int32_t erasesize; /* For this region */
u_int32_t numblocks; /* Number of blocks of erasesize in this region */
};
struct mtd_info {
u_char type;
u_int32_t flags;
u_int32_t size; // Total size of the MTD
/* "Major" erase size for the device. Naïve users may take this
* to be the only erase size available, or may use the more detailed
* information below if they desire
*/
u_int32_t erasesize;
u_int32_t oobblock; // Size of OOB blocks (e.g. 512)
u_int32_t oobsize; // Amount of OOB data per block (e.g. 16)
u_int32_t ecctype;
u_int32_t eccsize;
// Kernel-only stuff starts here.
char *name;
int index;
/* Data for variable erase regions. If numeraseregions is zero,
* it means that the whole device has erasesize as given above.
*/
int numeraseregions;
struct mtd_erase_region_info *eraseregions;
/* This really shouldn't be here. It can go away in 2.5 */
u_int32_t bank_size;
struct module *module;
int (*erase) (struct mtd_info *mtd, struct erase_info *instr);
/* This stuff for eXecute-In-Place */
int (*point) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char **mtdbuf);
/* We probably shouldn't allow XIP if the unpoint isn't a NULL */
void (*unpoint) (struct mtd_info *mtd, u_char * addr);
int (*read) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
int (*write) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf);
int (*read_ecc) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf, u_char *eccbuf, int oobsel);
int (*write_ecc) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf, u_char *eccbuf, int oobsel);
int (*read_oob) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
int (*write_oob) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf);
/*
* Methods to access the protection register area, present in some
* flash devices. The user data is one time programmable but the
* factory data is read only.
*/
int (*read_user_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
int (*read_fact_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
/* This function is not yet implemented */
int (*write_user_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
/* iovec-based read/write methods. We need these especially for NAND flash,
with its limited number of write cycles per erase.
NB: The 'count' parameter is the number of _vectors_, each of
which contains an (ofs, len) tuple.
*/
int (*readv) (struct mtd_info *mtd, struct iovec *vecs, unsigned long count, loff_t from, size_t *retlen);
int (*readv_ecc) (struct mtd_info *mtd, struct iovec *vecs, unsigned long count, loff_t from,
size_t *retlen, u_char *eccbuf, int oobsel);
int (*writev) (struct mtd_info *mtd, const struct iovec *vecs, unsigned long count, loff_t to, size_t *retlen);
int (*writev_ecc) (struct mtd_info *mtd, const struct iovec *vecs, unsigned long count, loff_t to,
size_t *retlen, u_char *eccbuf, int oobsel);
/* Sync */
void (*sync) (struct mtd_info *mtd);
/* Chip-supported device locking */
int (*lock) (struct mtd_info *mtd, loff_t ofs, size_t len);
int (*unlock) (struct mtd_info *mtd, loff_t ofs, size_t len);
/* Power Management functions */
int (*suspend) (struct mtd_info *mtd);
void (*resume) (struct mtd_info *mtd);
#ifdef CONFIG_MTD_NAND_LOGICAL_ADDRESS_ACCESS
/* Logical Address Access functions */
int (*cleanup_laddr)(struct mtd_info *mtd);
int (*read_laddr)(struct mtd_info *mtd, loff_t from, size_t len, u_char *buf);
int (*write_laddr)(struct mtd_info *mtd, loff_t to, size_t len, u_char *buf, int (*eraseproc)(struct mtd_info *mtd, u_int32_t addr));
#endif
void *priv;
};
/* Kernel-side ioctl definitions */
extern int add_mtd_device(struct mtd_info *mtd);
extern int del_mtd_device (struct mtd_info *mtd);
extern struct mtd_info *__get_mtd_device(struct mtd_info *mtd, int num);
static inline struct mtd_info *get_mtd_device(struct mtd_info *mtd, int num)
{
struct mtd_info *ret;
ret = __get_mtd_device(mtd, num);
if (ret && ret->module && !try_inc_mod_count(ret->module))
return NULL;
return ret;
}
static inline void put_mtd_device(struct mtd_info *mtd)
{
if (mtd->module)
__MOD_DEC_USE_COUNT(mtd->module);
}
struct mtd_notifier {
void (*add)(struct mtd_info *mtd);
void (*remove)(struct mtd_info *mtd);
struct mtd_notifier *next;
};
extern void register_mtd_user (struct mtd_notifier *new);
extern int unregister_mtd_user (struct mtd_notifier *old);
#ifndef MTDC
#define MTD_ERASE(mtd, args...) (*(mtd->erase))(mtd, args)
#define MTD_POINT(mtd, a,b,c,d) (*(mtd->point))(mtd, a,b,c, (u_char **)(d))
#define MTD_UNPOINT(mtd, arg) (*(mtd->unpoint))(mtd, (u_char *)arg)
#define MTD_READ(mtd, args...) (*(mtd->read))(mtd, args)
#define MTD_WRITE(mtd, args...) (*(mtd->write))(mtd, args)
#define MTD_READV(mtd, args...) (*(mtd->readv))(mtd, args)
#define MTD_WRITEV(mtd, args...) (*(mtd->writev))(mtd, args)
#define MTD_READECC(mtd, args...) (*(mtd->read_ecc))(mtd, args)
#define MTD_WRITEECC(mtd, args...) (*(mtd->write_ecc))(mtd, args)
#define MTD_READOOB(mtd, args...) (*(mtd->read_oob))(mtd, args)
#define MTD_WRITEOOB(mtd, args...) (*(mtd->write_oob))(mtd, args)
#define MTD_SYNC(mtd) do { if (mtd->sync) (*(mtd->sync))(mtd); } while (0)
#endif /* MTDC */
/*
* Debugging macro and defines
*/
#define MTD_DEBUG_LEVEL0 (0) /* Quiet */
#define MTD_DEBUG_LEVEL1 (1) /* Audible */
#define MTD_DEBUG_LEVEL2 (2) /* Loud */
#define MTD_DEBUG_LEVEL3 (3) /* Noisy */
#ifdef CONFIG_MTD_DEBUG
#define DEBUG(n, args...) \
if (n <= CONFIG_MTD_DEBUG_VERBOSE) { \
printk(KERN_INFO args); \
}
#else /* CONFIG_MTD_DEBUG */
#define DEBUG(n, args...)
#endif /* CONFIG_MTD_DEBUG */
#endif /* __KERNEL__ */
#endif /* __MTD_MTD_H__ */
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